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| PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * Push-pull type N-channel GaAs MESFET * High Output Power : 100 W TYP. * High Linear Gain : 11.0 dB TYP. * High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1823P-100) ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IG PT Tch Tstg Ratings 15 -7 76 440 220 Note Unit V V A mA W C C 175 -65 to +175 Note TC = 25C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13839EJ1V0DS00 (1st edition) Date Published November 1998 N CP(K) Printed in Japan (c) 1998 NES1823P-100 RECOMMENDED OPERATING LIMITS Parameter Drain to Source Voltage Gain Compression Channel Temperature Set Drain Current Gate Resistance Note 1 Symbol VDS Gcomp Tch IDset Rg Test Condition MIN. TYP. 10.0 MAX. 10.0 3.0 +150 Unit V dB C A 6.0 10 8.0 12.5 Note 2 Notes 1. IDset = 3.0 A each drain, VDS = 10 V, RF OFF. 2. Rg is the series resistance between the gate supply and FET gate. ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Saturated Drain Current Pinch-off Voltage Thermal Resistance Output Power Drain Current Drain Efficiency Linear Gain Symbol IDSS Vp Rth Pout ID Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, IDS = 330 mA Channel to Case f = 2.2 GHz, VDS = 10 V Pin = +42.5 dBm, Rg = 12.5 IDset = 6.0 A Total (RF OFF)Note 49.0 -4.0 MIN. TYP. 76 -2.6 0.6 50.0 20.0 50 9.0 11.0 32.5 0.8 MAX. Unit A V C/W dBm A % dB D GL Note IDset = 3.0 A each drain 2 Preliminary Data Sheet NES1823P-100 TYPICAL CHARACTERISTICS (TA = +25C) POWER MATCHING AND IM3 MATCHING NEC produces two type matching circuits, power matching and IM3 matching. Power matching circuit is used our production line. And the IM3 matching circuit is useful for the customers to design the special tuning application. The power matching is designed as this, input impedance is gain-matching, output is matched with power matching impedance which is calculated with large signal simulation model. The IM3 matching is designed as this, input impedance is matched to the impedance which has the direction of decreasing S21 phase-shift, output impedance is matched to the almost same as the efficiency matching impedance. Those typical RF data are shown as this, GL = 10.2 dB Pout = 50.0 dBm IM3 = -28 dBc at power matching, GL = 10.0 dB Pout = 49.3 dBm IM3 = -31 dBc at IM3 matching (@2 tone Pout = 40 dBm). Preliminary Data Sheet 3 NES1823P-100 POWER MATCHING OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 55 80 50 70 45 Pout 60 D 40 50 Output Power Pout (dBm) 30 ID 30 25 20 20 10 15 0 10 20 25 30 35 40 45 Input Power Pin (dBm) -10 VDS = 10 V f = 2.2 GHz IDset = 2 A IDset = 4 A IDset = 6 A Rg = 12.5 4 Preliminary Data Sheet Drain Current ID (A) 35 40 Drain Efficiency D (%) NES1823P-100 DISTORTION MATCHING OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 55 80 50 Pout 70 45 60 D 40 50 Output Power Pout (dBm) 30 30 25 20 ID 20 10 15 0 10 20 25 30 35 40 45 Input Power Pin (dBm) -10 VDS = 10 V f = 2.12 GHz IDset = 6 A IDset = 8 A IDset = 10 A Rg = 12.5 Preliminary Data Sheet Drain Current ID (A) 35 40 Drain Efficiency D (%) 5 NES1823P-100 POWER MATCHING 3rd INTERMODULATION DISTORTION vs. 2 TONES OUTPUT POWER -10 -15 3rd Intermodulation Distortion IM3 (dBc) -20 -25 -30 -35 -40 4A -45 -50 -55 -60 25 30 35 40 45 50 VDS = 10 V 2 tones Output Power Pout (2 tones) (dBm) 2A 6A f = 1 MHz f = 2.2 GHz IDset = 2 A IDset = 4 A IDset = 6 A Rg = 12.5 6 Preliminary Data Sheet NES1823P-100 DISTORTION MATCHING 3rd INTER MODULATION DISTORTION vs. 2TONES OUTPUT POWER -10 -15 3rd Intermodulation Distortion IM3 (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 25 30 35 40 45 50 2 tones Output Power Pout (2 tones) (dBm) VDS = 10 V f = 1 MHz f = 2.12 GHz IDset = 6 A IDset = 8 A IDset = 10 A Rg = 12.5 V Preliminary Data Sheet 7 NES1823P-100 DISTORTION MATCHING 3rd INTER MODULATION DISTORTION vs. 2TONES OUTPUT POWER -10 -15 3rd Intermodulation Distortion IM3 (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 25 30 35 40 45 50 2 tones Output Power Pout (2 tones) (dBm) VDS = 10 V f = 20 MHz f = 2.12 GHz IDset = 6 A IDset = 8 A IDset = 10 A Rg = 12.5 8 Preliminary Data Sheet NES1823P-100 S-Parameters VDS = 10 V, IDset = 3 A each drain START 1 GHz, STOP 3 GHz, STEP 40 MHz S11 1.0 0.5 2.0 +135 +45 Marker 2.2 GHz S12 +90 0 0.5 1 2 180 0 -135 -0.5 -1.0 -2.0 -90 -45 Rmax. = 1 Rmax. = 0.1 S21 S22 1.0 0.5 2.0 +90 +135 +45 180 0 0 0.5 1 2 -135 -90 -45 -0.5 -1.0 -2.0 Rmax. = 5 Rmax. = 1 Preliminary Data Sheet 9 NES1823P-100 S-Parameters VDS = 10 V, IDset = 3 A each drain FREQUENCY GHz MAG. S11 ANG. MAG. S21 ANG. MAG. S12 ANG. MAG. S22 ANG. 1.000 1.040 1.080 1.120 1.160 1.200 1.240 1.280 1.320 1.360 1.400 1.440 1.480 1.520 1.560 1.600 1.640 1.680 1.720 1.760 1.800 1.840 1.880 1.920 1.960 2.000 2.040 2.080 2.120 2.160 2.200 2.240 2.280 2.320 2.360 2.400 2.440 2.480 2.520 2.560 2.600 2.640 2.680 2.720 2.760 2.800 2.840 2.880 2.920 2.960 3.000 0.959 0.959 0.956 0.956 0.956 0.950 0.946 0.941 0.941 0.935 0.927 0.920 0.912 0.903 0.890 0.876 0.858 0.839 0.815 0.789 0.756 0.719 0.674 0.616 0.548 0.474 0.405 0.371 0.403 0.477 0.553 0.622 0.664 0.693 0.712 0.719 0.723 0.721 0.713 0.701 0.684 0.661 0.632 0.594 0.542 0.483 0.499 0.530 0.555 0.587 0.625 173.5 172.7 171.7 170.8 170.8 168.7 167.5 166.2 164.8 163.3 161.7 159.9 158.1 156.0 153.9 151.5 149.1 146.6 143.8 141.2 138.1 135.1 132.1 129.1 127.3 127.6 132.9 144.4 156.0 160.5 159.4 155.8 150.3 144.6 138.7 132.7 127.3 120.8 114.1 106.5 98.3 88.7 78.0 65.6 51.8 40.7 29.6 10.9 -9.1 -28.3 -46.2 0.857 0.537 0.478 0.429 0.419 0.408 0.424 0.416 0.475 0.540 0.577 0.728 0.780 0.956 1.001 1.183 1.262 1.364 1.542 1.585 1.823 1.968 2.157 2.379 2.757 2.806 3.193 3.181 3.141 3.069 2.740 2.545 2.246 2.008 1.732 1.576 1.333 1.181 1.131 0.887 0.965 0.751 0.851 0.727 0.735 0.650 0.714 0.636 0.689 0.654 0.625 65.1 58.8 57.7 58.5 59.5 62.7 60.9 66.8 68.3 68.3 67.2 66.4 59.2 55.2 46.2 41.6 30.6 24.7 16.7 6.3 3.4 -11.4 -16.4 -28.8 -40.5 -54.6 -70.0 -85.4 -103.6 -118.7 -133.2 -150.0 -157.0 -175.7 -178.2 165.7 161.8 156.5 149.7 145.0 142.0 135.7 134.8 125.7 119.7 119.2 109.0 106.7 94.9 88.7 72.9 0.006 0.006 0.006 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.012 0.012 0.014 0.015 0.017 0.018 0.021 0.022 0.025 0.028 0.030 0.036 0.038 0.044 0.045 0.054 0.055 0.059 0.058 0.054 0.051 0.048 0.042 0.036 0.038 0.031 0.033 0.029 0.028 0.028 0.028 0.026 0.027 0.026 0.023 0.022 0.020 0.023 0.023 0.022 0.024 62.5 57.4 53.7 51.0 48.3 47.1 43.5 43.8 37.8 34.8 32.1 28.6 20.2 18.9 9.6 7.7 -1.8 -8.4 -18.3 -25.1 -36.7 -45.7 -58.5 -74.2 -85.5 -103.2 -120.7 -140.4 -159.5 -179.6 168.1 147.2 135.8 123.9 114.5 100.7 94.9 80.3 74.3 65.5 46.9 44.9 27.6 18.4 3.4 -5.7 -7.0 -15.0 -24.8 -36.4 -47.5 0.943 0.924 0.922 0.914 0.904 0.898 0.880 0.866 0.851 0.832 0.814 0.794 0.776 0.758 0.739 0.720 0.701 0.683 0.663 0.644 0.625 0.606 0.583 0.563 0.535 0.499 0.461 0.436 0.443 0.483 0.543 0.605 0.660 0.708 0.749 0.783 0.804 0.823 0.848 0.860 0.875 0.882 0.894 0.900 0.907 0.915 0.917 0.923 0.928 0.931 0.932 171.2 166.7 165.7 164.2 162.7 161.5 159.8 158.2 156.4 154.7 152.8 150.9 148.9 146.8 144.5 142.0 139.5 136.7 133.6 130.0 125.8 120.5 113.6 104.6 91.7 74.1 50.3 19.8 -14.0 -44.9 -69.8 -89.0 -103.5 -115.0 -124.2 -131.9 -136.9 -142.7 -147.4 -151.8 -155.2 -158.4 -161.5 -163.8 -166.2 -168.7 -170.4 -172.2 -174.0 -175.7 -177.1 10 Preliminary Data Sheet NES1823P-100 CIRCUIT DESIGN The matching circuit of package inside consists of bond-wire, chip-capacitor and microstrip line on the alumina substrate. The package-lead impedance is designed as 25 connecting to the external matching circuit, in the external circuit design, the microstrip line impedance is 25 , conjugate with package impedance, then the impedance is connected to balun, it is 1:2 balun structure, finally connected to 50 . Balun technology has some advantage over single-ended device, minimize matching-loss with decrease of impedance change ratio and cancel the even mode harmonic frequency for IM3 performance. The balun circuit is employed for this product. BALUN DESIGN The balun design is the key for these high power push-pull structure device. NEC designed low insertion loss microstrip balun for this product. What is the reason of our choice? One is the repeatability of assembly, and the other is its performance. Microstrip balun performance tolerance is small because of its simple structure. So the balun performance is stable and repeatable between NEC and customers. And its insertion loss is 0.2 dB less than coaxial balun 0.3 dB, also Its band width is better than coaxial balun. The microstrip balun is consists of microstrip pattern and cavity, therefore its insertion loss and band width due to its parameter design. Those parameters are optimized with simuration. : (substrate duroid r = 2.2 t = 0.8 mm) Then the phase difference between two ports is 180 4, insertion loss is 0.2 dB from 1 to 3 GHz. DC STABILITY (AVOID OSCILLATION) The function of DC-cut capacitor arranged between transformer and microstrip balun is avoid DC oscillation. When the gate is pinch-off, a few pinch-off voltage (VP) difference of each port occur the loop current, then start DC oscillation in the area of pinch-off. Because of this reasons, the DC-cut capacitor is need to this microstrip balun assemble. Additionally, the ground of transformer substate is effective to DC oscillation, so that five screws are arranged at the middle of substrate. Preliminary Data Sheet 11 NES1823P-100 RF TEST FIXTURE Input MS Balun 25 180 50 IN 0 device 25 0 50 25 25 180 OUT Output MS Balun 1 000 pF 4.7 F transformer Input MS Balun DC CUT 39 pF Rg=5 4.7 F transformer Output MS Balun DC CUT 20 pF x 2 OUT device IN 1 000 pF cavity (depth = 1.2 mm) 4.7 F Series R = 510 chip C 2.2 F 1 000 pF cavity (depth = 1.2 mm) 4.7 F Rg = 10 VGS VDS 12 Preliminary Data Sheet NES1823P-100 FIGURES OF SUBSTRATE (UNIT: mm) BALUN (FACE) 38.75 8.25 10.75 33.25 35.25 37.75 39.75 41.75 59.25 72.22 0 75 +0 -0.1 0 3.08 5 adjusting patterns at a 0.5 mm pitch 17 19 20.5 23 28.5 18 20.5 0 2.78 2-C5.5 0.5 0.5 20 22.5 C2.5 2-C1.5 6 - 3 41 43.13 46.92 50 +0 -0.1 46.5 22.75 41.25 46.75 52.25 28.25 BALUN (BACK) 49.5 5.3 0.5 10 6 33.75 61.01 0 20.5 19.5 9 5.5 6.5 17 7.5 13.5 21.5 34.5 49.5 Preliminary Data Sheet 3 6 1 1.5 13 NES1823P-100 TRANSFORMER 75 +0 -0.1 70 65 30 18.8 92 - 2 3.5 5 - 3.5 4 - 3 1 7.8 3 5 1 1.8 30 +0 -0.1 5 6.5 15 1 10 2.5 4 1 4.5 15.5 35 61 61.5 2 4 4 16 - 1 through hole t = 0.8 mm r = 2.2 14 Preliminary Data Sheet 1 2 3 7 10 5 12 5 NES1823P-100 PACKAGE DIMENSIONS (UNIT: mm) 35.2 0.3 9.7 0.3 45 G1 G2 2.4 0.3 S S D1 R1.2 0.3 4.0 0.3 31.6 0.3 D2 2.4 0.2 G1, G2: Gate D1, D2: Drain S : Source Preliminary Data Sheet 1.8 0.2 4.75 MAX. 17.4 0.3 8.0 15 NES1823P-100 RECOMMENDED MOUNTING CONDITION FOR CORRECT USE (1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange. (2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw. (3) Recommended flatness of the mount surface is less than 10 m. (roughness of surface is ) RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260C Time: 5 seconds or less (per pin row) Recommended Condition Symbol - For details of recommended soldering conditions, please contact your local NEC sales office. 16 Preliminary Data Sheet NES1823P-100 [MEMO] Preliminary Data Sheet 17 NES1823P-100 [MEMO] 18 Preliminary Data Sheet NES1823P-100 [MEMO] Preliminary Data Sheet 19 NES1823P-100 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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